کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1265740 | 972236 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer–Neldel rule
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Based on the model of thin-film transistors in which the active layer is treated as two-dimensional, the effects of traps are studied. It is shown that when abundant discrete trap states are present, the field-effect mobility becomes temperature dependent. In case the traps are distributed exponentially in energy, a Meyer–Neldel rule for the temperature dependence of mobility and current results. When also the mobile states are distributed in energy, in the so-called band-tail states, the mobility is no longer thermally activated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 7, Issue 6, December 2006, Pages 592–599
Journal: Organic Electronics - Volume 7, Issue 6, December 2006, Pages 592–599
نویسندگان
P. Stallinga, H.L. Gomes,