Ambipolar organic transistors based on isoindigo derivatives

• Isoindigo shows ambipolar transistor properties.
• Isoindigo has a variety of crystal structures.
• Isoindigo derivatives whose HOMO levels are lower than −5.8 eV do not show hole transport.

Structural and transistor properties of isoindigo derivatives are investigated. The unsubstituted isoindigo affords two polymorphs in addition to the reported brickwork structure; one has a stacking structure analogous to indigo, and another consists of nonplanar molecules. The unsubstituted isoindigo exhibits ambipolar transistor properties with the hole and electron mobilities more than 0.01 cm2/Vs, and 6.6′-diphenylisoindigo shows ambipolar transistor properties with the hole/electron mobilities of 0.037/0.027 cm2/Vs. Isoindigo derivatives with electron withdrawing groups show only electron transport, indicating that the lower limit of the HOMO level showing the hole transport is −5.7 eV.

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