کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1266817 1496822 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
F4TCNQ-doped DEPT-SC as hole transporting material for stable perovskite solar cells
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
F4TCNQ-doped DEPT-SC as hole transporting material for stable perovskite solar cells
چکیده انگلیسی


• After doping with F4TCNQ, the PCE of DEPT-SC based perovskite solar cells increased 18%.
• After doping with F4TCNQ, the stability of the cells remains the same to the pristine device.
• The charge transfer between HTM-DEPT-SC and dopant-F4TCNQ was proved by proton nuclear magnetic resonance characterization.
• DEPT-SC doped with F4TCNQ is a stable hole transport material compared to famous spiro-OMeTAD.

The CH3NH3PbI3-based perovskite solar cells using α, α′-diethoxyethyl-oligothiophenes (DEPT-SC) doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquino-dimethane (F4TCNQ) as hole transport material (HTM) exhibited a power conversion efficiency of 11.52%. Compared to the pristine devices, the perovskite solar cells using the new synthesized HTM showed an increased efficiency by about 18% and exhibited better photo-stability, indicating that the organic dopant is an effective method for DEPT-SC toward stable perovskite solar cells.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 35, August 2016, Pages 171–175
نویسندگان
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