Memory behavior of multi-bit resistive switching based on multiwalled carbon nanotubes

• Ni/MWCNTs:PMMA/ITO was fabricated to research on the multi-bit resistive switching.
• Ni/MWCNTs (2 wt%):PMMA/ITO bears ternary WORM memory.
• The ON/OFF current ratio of Ni/MWCNTs (2 wt%):PMMA/ITO can exceed 107.
• Retention (>106 s) and endurance (>1012 cycles) confirm excellent ternary memory.

Multiwalled carbon nanotube (MWCNT) displays peculiar electrical behavior, with its nano-configuration consisting of exceptional graphene flakes. As for MWCNTs blended into polymethyl methacrylate (PMMA), sandwiched Ni/MWCNTs(2 wt%):PMMA/ITO was manufactured to investigate into the multi-bit resistive switching regarding the turn-on compliance current as well as the thickness of the active layer. It bears ternary write-once read-many-times (WORM) memory, whose current proportionality between ON-state and OFF-state can exceed 107. Moreover, the memory performance, covering the long-term retention (>106 s), better endurance (>1012 cycles) and device-to-device profiles, confirms the excellent ternary memory of MWCNTs:PMMA. Concentration on multi-bit resistive switching in respect of MWCNTs underlies performance enhancement, higher integration and advanced architecture.

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