کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267051 | 1496826 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
• The strip-off method is a solvent-free method to use nano-imprint for pattern transfer.
• A vertical organic transistor with sub-100 nm holes is fabricated by the proposed strip-off nano-imprint.
• The solvent-free method reduces the leakage in transistor and the sub-100 nm structure improves the on/off ratio.
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10−5 mA/cm2 and high ON/OFF current ratio as high as 105.
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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 31, April 2016, Pages 227–233
Journal: Organic Electronics - Volume 31, April 2016, Pages 227–233
نویسندگان
Xiang Fang, Chia-Ho Lin, Yung-Tai Sun, Huei-Tzu Chin, Hsiao-Wen Zan, Hsin-Fei Meng, Sheng-Fu Horng, Lon A. Wang,