A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

• The strip-off method is a solvent-free method to use nano-imprint for pattern transfer.
• A vertical organic transistor with sub-100 nm holes is fabricated by the proposed strip-off nano-imprint.
• The solvent-free method reduces the leakage in transistor and the sub-100 nm structure improves the on/off ratio.

A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10−5 mA/cm2 and high ON/OFF current ratio as high as 105.

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