Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites

• An air stable non-volatile hybrid organic–inorganic memory structure is proposed.
• High retention times and long-term lifetimes were obtained.
• Filamentary conduction is the driving mechanism for the resistive switching.
• Metal nanoparticles play a fundamental role in assisting filaments formation.

A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching.

Figure optionsDownload as PowerPoint slide