Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

• Hybrid diF-TESADT OTFT, ZnO TFT inverters with sub-pA leakage current and high gain.
• Hybrid CMOS inverters have good logic level conservation.
• Ink-jet printed diF-TESADT OTFTs with field mobility as large as 0.4 cm2/V s.
• Hybrid CMOS inverters fabricated in a 4 mask process plus 1 ink-jet print step.
• Low temperature (<200 °C) hybrid CMOS inverter fabrication process.

We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diF-TESADT OTFTs have field effect mobility as large as 0.4 cm2/V s. PEALD ZnO TFTs typically have field-effect mobility >15 cm2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (⩽200°C process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and sub-pA leakage currents for both low and high input levels.

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