Growth of rubrene crystalline thin films using thermal annealing on DPPC LB monolayer

• Rubrene thin films with high crystalline quality are obtained on a DPPC LB monolayer.
• The rubrene thin films are found to be interconnected and highly ordered.
• The crystallization process is shortly explained.
• OTFTs devices based on those rubrene thin films exhibit high performance.

High crystalline thin films of 5,6,11,12-tetraphenylnaphthacene (rubrene) can be obtained after in situ thermal post annealing using SiO2 gate dielectric modified with a 1,2-dipalmitoyl-sn-glycero-3-phosphocholine (DPPC) monolayer obtained via Langmuir–Blodgett transfer. Such formed rubrene crystalline films are interconnected and highly ordered with defined molecular orientation. Organic thin film transistors (OTFTs) with high performance are reproducibly demonstrated with the mobility of 0.98 cm2/V s, the threshold voltage of −8 V and the on–off current ratio of higher than 107. The results indicate that our approach is a promising one for preparing high quality rubrene crystalline films.

Figure optionsDownload as PowerPoint slide