Organic inkjet-patterned memory array based on ferroelectric field-effect transistors

An inkjet-patterned, flexible organic memory array was demonstrated using non-volatile ferroelectric field-effect transistors which remained functional below 0.6% tensile strain. Each memory cell is comprised of an addressing transistor and a ferroelectric memory transistor. Less than 20% cross-talk was observed between neighboring cells, and binary memory states in a 7 × 8 array were retained for at least 8 h. Variations among the printed memory transistors were characterized and shown to be caused by different rates of charge trapping in the semiconductor–ferroelectric interface.

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► An inkjet-patterned active-matrix array using non-volatile ferroelectric field-effect transistors (feFETs) as memory elements.
► One addressing transistor and one ferroelectric memory transistor per cell.
► Functional below 0.6% tensile strain and data retained for at least two weeks.
► Variations in read-out current due to different rates of charge trapping in semiconductor–ferroelectric interface.