کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267554 | 972360 | 2012 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Organic inkjet-patterned memory array based on ferroelectric field-effect transistors Organic inkjet-patterned memory array based on ferroelectric field-effect transistors](/preview/png/1267554.png)
An inkjet-patterned, flexible organic memory array was demonstrated using non-volatile ferroelectric field-effect transistors which remained functional below 0.6% tensile strain. Each memory cell is comprised of an addressing transistor and a ferroelectric memory transistor. Less than 20% cross-talk was observed between neighboring cells, and binary memory states in a 7 × 8 array were retained for at least 8 h. Variations among the printed memory transistors were characterized and shown to be caused by different rates of charge trapping in the semiconductor–ferroelectric interface.
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► An inkjet-patterned active-matrix array using non-volatile ferroelectric field-effect transistors (feFETs) as memory elements.
► One addressing transistor and one ferroelectric memory transistor per cell.
► Functional below 0.6% tensile strain and data retained for at least two weeks.
► Variations in read-out current due to different rates of charge trapping in semiconductor–ferroelectric interface.
Journal: Organic Electronics - Volume 12, Issue 12, December 2011, Pages 2012–2018