Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion

We report a hybrid up-conversion device integrating a In0.2Ga0.8As/GaAs MQWs photodetector with an organic light emitting diode (OLED), that converts input 980 nm infrared light to output 520 nm green light. Devices with different interface layer, used as the hole injection layer (HIL) in OLEDs were fabricated and tested. It was found that the device with an HIL of MoO3-doped CuPc exhibited a lowest turn-on voltage of 2.6 V. The maximum external up conversion efficiency of 0.81 W/W% is achieved at the bias of 20 V under an input 980 nm NIR power density of 1 mW/mm2.

Schematic diagram of up conversion device.Figure optionsDownload as PowerPoint slideHighlights
► We designed and fabricated the organic-inorganic hybrid light up-conversion devices.
► Up-convertor is composed of an OLED and In0.2Ga0.8As MQWS photodetector.
► We examine three different interface layers for upconversion device performance.
► That the appropriate interface layer is crucial for the up conversion device.