High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer

A high performance VOPc thin-film transistor based on a fluorobenzene end-capped quaterthiophene as the inducing layer is fabricated by weak epitaxy growth method. The quality of epitaxial VOPc films is significantly improved. A commensurate epitaxial relationship is formed between the inducing layer and the VOPc films, leading to highly ordered VOPc films with large grains, which enhances the in-plane carrier transport. The field-effect mobility reaches up to 2.6 cm2 V−1 s−1, the threshold voltage is lower than −5 V, and the on–off current ratio is higher than 106. The device performance has no significant degradation in ambient condition for 100 days. The high-performance and the air-stable VOPc OTFTs promote the practical applications for large-area and flexible display.

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► A high performance VOPc transistor was obtained using a new inducing layer F2-P4T.
► F2-P4T film possesses smooth surface and small lattice mismatch with VOPc, resulting in a high quality VOPc films.
► The VOPc transistors present high mobility up to 2.6 cm2/V s, and low threshold voltage.
► Less deterioration of the transistor performances was observed after 100 days stored in ambient condition.