کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267723 | 972376 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface dipole of F4TCNQ films: Collective charge transfer and dipole–dipole repulsion in submonolayers
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface dipole of F4TCNQ films: Collective charge transfer and dipole–dipole repulsion in submonolayers Surface dipole of F4TCNQ films: Collective charge transfer and dipole–dipole repulsion in submonolayers](/preview/png/1267723.png)
چکیده انگلیسی
A charge transfer (CT) model is introduced for strong acceptors like A = F4TCNQ that are ionized on surfaces at low coverage θ. Each A forms a CT dimer with a surface state S. Dipole–dipole repulsion grows as θ3/2 up to θ = 1 in a full monolayer. Electron transfer ρ(θ) within dimers is found self-consistently and decreases with increasing coverage. The surface dipole and work function shift ΔΦ are proportional to θρ(θ). The CT model has implications for photoemission and accounts for ΔΦ(d) profiles of F4TCNQ films of thickness d on Cu(1, 1, 1) or on hydrogenated diamond (1, 0, 0). The CT model also describes ΔΦ(θ) of organic donors on metals and is contrasted to previous treatments of dipoles on a surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 12, Issue 1, January 2011, Pages 39–44
Journal: Organic Electronics - Volume 12, Issue 1, January 2011, Pages 39–44
نویسندگان
Zoltán G. Soos, Benjamin J. Topham,