کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267728 | 972376 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-mobility polymer space–charge-limited transistor with grid-induced crystallinity
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10−5 cm2/Vs to 10−3 cm2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space–charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on–off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 12, Issue 1, January 2011, Pages 78–82
Journal: Organic Electronics - Volume 12, Issue 1, January 2011, Pages 78–82
نویسندگان
Yu-Chiang Chao, Mu-Chun Niu, Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Che Ku,