کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1267728 972376 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-mobility polymer space–charge-limited transistor with grid-induced crystallinity
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
High-mobility polymer space–charge-limited transistor with grid-induced crystallinity
چکیده انگلیسی

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10−5 cm2/Vs to 10−3 cm2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space–charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on–off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 12, Issue 1, January 2011, Pages 78–82
نویسندگان
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