Low-temperature printing of crystalline:crystalline polymer blend transistors

By blending poly(3-hexylthiophene) with poly(vinylidene fluoride) and with careful solvent selection, field-effect transistors are fabricated from solution with deposition temperatures suitable for use in low-cost roll-to-roll manufacturing techniques. A percolation threshold of only ∼3 wt.% P3HT is demonstrated, with field-effect mobilities of 0.04 cm2/Vs obtained in such PVDF-rich blend devices being equal to neat P3HT field-effect transistors. We illustrate the potential of this material system by the fabrication of working field-effect transistor devices, wherein the semiconductor blend is deposited via flexo-printing. Flexible polyethylene naphthalate substrates and an organic gate dielectric were utilized for this purpose.