کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1268074 1496842 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fast, simple ZnO/organic CMOS integrated circuits
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Fast, simple ZnO/organic CMOS integrated circuits
چکیده انگلیسی

Hybrid organic–inorganic CMOS thin-film circuits are a simple, potentially low-cost, approach for large-area, low-power microelectronic applications. We have used atmospheric pressure processes to deposit inorganic ZnO and organic diF TES-ADT semiconductor layers and an Al2O3 gate dielectric. The organic semiconductor uses a contact-treatment-related microstructure that allows circuits to operate without directly patterning the organic layer. Using a simple 4-mask process with bifunctional Ti/Au contacts for both ZnO and organic transistors, 7-stage ring oscillators were fabricated and operated at >500 kHz corresponding to a propagation delay of <150 ns/stage at a supply bias of 35 V. These are the fastest organic–inorganic CMOS circuits reported to date.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 10, Issue 8, December 2009, Pages 1632–1635
نویسندگان
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