Organic bistable memory device using MoO3 nanocrystal as a charge trapping center

Organic bistable memory devices (OBDs) with MoO3 as a nanocrystal inside organic layer were developed and bistability of MoO3 based OBDs was investigated. High on/off ratio over 200 was obtained at a low reading voltage of 1 V. MoO3 OBDs could be electrically switched between high conductance state and low conductance state over more than 100 cycles and space charge limited conduction mechanism dominated switching behavior in MoO3 OBDs.