کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1268332 | 972401 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,Nâ²-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58Â cm2/Vs for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10-300Â K indicated that surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 10, Issue 5, August 2009, Pages 895-900
Journal: Organic Electronics - Volume 10, Issue 5, August 2009, Pages 895-900
نویسندگان
Ying Zhang, Hoon-Seok Seo, Min-Jun An, Jong-Ho Choi,