کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1268349 | 972401 | 2009 | 5 صفحه PDF | دانلود رایگان |
The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI–C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 μs at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed.
Journal: Organic Electronics - Volume 10, Issue 5, August 2009, Pages 1001–1005