High-performance n-type organic field-effect transistors fabricated by ink-jet printing using a C60 derivative

We report on the performance of ink-jet-printed n-type organic thin-film transistors (OTFTs) based on a C60 derivative, namely, C60-fused N-methyl-2-(3-hexylthiophen-2-yl)pyrrolidine (C60TH-Hx). The new devices exhibit excellent n-channel performance, with a highest mobility of 2.8 × 10−2 cm2 V−1 s−1, an IOn/IOff ratio of about 1 × 106, and a threshold voltage of 7 V. The C60TH-Hx films show large crystalline domains that result from the influence of an evaporation-induced flow, thus leading to high electron mobility in the ink-jet-printed devices.