کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1268651 | 972415 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Top gate pentacene thin film transistor with spin-coated dielectric
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Fabrication of top gate pentacene thin film transistor (TFT) is made possible with spin-coatable dielectrics by the technique presented here. Such fabrication has been impractical because of the ill effects a solvent can have on pentacene. A bilayer of pentacene on insulator that are coated on a mold is transferred to a glass substrate on which source and drain electrodes are defined. In the transfer process, pentacene is automatically patterned. This fabrication method allows for the channel length to be as small as photolithography would permit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 8, Issue 5, October 2007, Pages 615–620
Journal: Organic Electronics - Volume 8, Issue 5, October 2007, Pages 615–620
نویسندگان
Taegeun Kwon, Changhoon Baek, Hong H. Lee,