Synthesis and characterization of germanium (IV) and silicon (IV) complexes derived from 9-hydroxyphenalenone: X-ray crystal and molecular structure of tris-(9-oxophenalenone)-germanium (IV) and silicon (IV) salts

The germanium (IV) and silicon (IV) complexes, tris-(9-oxophenalenone)-germanium (IV) tetrakis[3,5-bis(trifluoromethyl) phenyl] borate (7+TFPB−) and tris-(9-oxophenalenone)-silicon (IV) tetrakis[3,5-bis(trifluoromethyl) phenyl] borate (8+TFPB−), derived from 9-hydroxyphenalenone have been synthesized and characterized by elemental analyses, infrared spectra and as well as by single crystal X-ray study. The crystal structure of 7+TFPB− and 8+TFPB− shows a one-dimensional chain like structure and π-overlap between the neighbouring phenalenyl planes. The cyclic voltammograms of 7+TFPB− and 8+TFPB− show three reversible one-electron reduction steps due to the formation of the radical, anion and dianion as each phenalenyl moiety accepts an electron.

Two new hexacoordinated germanium and silicon cations containing three phenalenyl units were prepared by reacting 9-hydroxyphenalenone with germanium tetrachloride (GeCl4) and silicon tetrachloride (SiCl4) and characterized by single crystal X-ray diffraction. The cyclic voltammograms show three reversible one-electron reduction steps due to the formation of the radical, anion and dianion as each phenalenyl moiety accepts an electron.Figure optionsDownload as PowerPoint slide