کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1440070 | 1509357 | 2016 | 7 صفحه PDF | دانلود رایگان |
• It is possible to tune pP junction in-situ.
• Conducting polymer having tunable bandgap as a function of ECS are used as semiconductors.
• Highest rectification ratio at −200 eV ECS, where Δ bandgap highest.
• Ideality factor less than 1, due to less charge carriers for recombination in conducting polymers.
The properties of the heterojunction devices are predetermined based on the bandgap and the extent of dopping of their constituent semiconductors and are not tunable in-situ. Albeit in this manuscript a new concept of in-situ tuning of heterojunction has been introduced. pP heterojunction using conducting polymers, polyaniline (PANI) and poly (3,4-ethylenedioxythiophene) (PEDOT) has been fabricated. The junction was studied by scanning electron microscopy and atomic force microscopy. The rectification behavior was studied through current density (J)–voltage (V) characteristics at various electrochemical potentials by superimposing small voltage steps (bias voltage) over a steady electrochemical potential using bipotentiostat. The rectification was found tunable as a function of electrochemical state of the polymers in in-situ conditions.
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Journal: Synthetic Metals - Volume 220, October 2016, Pages 95–101