Size-controlled ambipolar graphene nanoribbon transistors by an all-dry mask method

• Fabrication process: simple and novel non-solution method to integrate the GNR formation and the FET fabrication, minimizing the fabrication steps.
• Size-controlled: the channel length and width of the FET can be controlled by the SnO2 nanoribbons.
• Novel field-effect properties: presenting the promising ambipolar in air ambient and high mobility.
• The critical width of GNR up to 330 nm: the GNR device with the width up to 330 nm still presents the dramatic semiconductor property.

Conventional graphene nanoribbon (GNR) field-effect transistor (FET) fabrication involved the wet process with the separated nanoribbon formation and device fabrication. Here, we demonstrate one simple and novel non-solution method to integrate the GNR formation and the FET fabrication, where a gold film is used as mask for electrode deposition, following by using a SnO2 nanoribbon as mask for the formation of GNR. The channel length and width can be controlled by the widths of the gold film and the SnO2 nanoribbon, respectively. It is found that the GNR with the width up to 330 nm presents the promising ambipolar field-effect properties in air ambient, the hole and electron mobilities are respectively as high as 904 and 703 cm2 V−1 s−1, which benefits from the all dry process for both GNR fabrication and device fabrication.

The size-controlled ambipolar graphene nanoribbon transistors have been obtained by an all-dry mask method.Figure optionsDownload as PowerPoint slide