کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1440525 | 1509368 | 2015 | 7 صفحه PDF | دانلود رایگان |
• Two new disk-shaped semiconducting triphenylenes were synthesized.
• These molecules showed relatively low bandgap energies of ∼2.5 eV.
• Their single-crystal-based field-effect transistors displayed a maximum carrier mobility of ∼0.03 cm2 V−1 s−1.
We demonstrated the synthesis of two new solution-processed triphenylene-based semiconductors and characterized their physical, optical, and electrochemical properties. Both were intriguingly capable of producing smooth films and high-quality microcrystalline objects. The single-crystal-based field-effect transistors (FETs) using these semiconductors displayed a maximum carrier mobility of ∼0.03 cm2 V−1 s−1 and a high on/off current ratio of ∼103. Notably, the mobilities of the single-crystal-based FETs were measured to be two orders of magnitude greater than those of the thin-film transistors. To our knowledge, the carrier mobility obtained in this work is the highest ever reported for single-crystal FETs made of triphenylene analogues.
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Journal: Synthetic Metals - Volume 209, November 2015, Pages 434–440