کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1440617 1509371 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nonperipheral tetra phthalocyanines bearing alkyl chain moiety; Synthesis, characterization and fabrication of the OFET based on phthalocyanine
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Nonperipheral tetra phthalocyanines bearing alkyl chain moiety; Synthesis, characterization and fabrication of the OFET based on phthalocyanine
چکیده انگلیسی


• Synthesis and characterization of highly soluble α-substituted phthalocyanines.
• Surface morphology of synthesized α-substituted phthalocyanines was performed with AFM.
• Fabrication of the transistor (OTFT) or organic field effect transistor (OFET) based on phthalocyanine.

In this study, the novel tetra nonperipherally α-substituted 1(4), 8(11), 15(18), 22(25)-tetrakis undecyloxy phthalocyanine derivatives bearing 1-dodecanol moiety, M{Pc[O–(CH2)11CH3)]4 (MCo(2), Zn(3), Cu(4), Mn(5))}, (Pc: Phthalocyanine) have been synthesized for the first time and their structures characterized by using 1H NMR, 13C NMR, FT-IR, MALDI-TOF/MS, UV–vis spectral and elemental analysis. Also Surface morphology of phthalocyanine complexes were investigated by atomic force microscope (AFM) as complementary technic. The new synthesized complexes are soluble in both polar solvents, such as THF and DMF, and nonpolar solvents such as CHCl3, CH2Cl2, benzene and hexane. An organic thin film transistor (OTFT) or organic field effect transistor (OFET), based on novel cobalt phthalocyanine (CoPc) was fabricated with SiO2 as the gate dielectric material. We have also investigated electrical characterization of the OTFT of the new synthesis CoPc layer and composite semiconductor material. While Au was deposited as gate contact, source and drain contacts of the device were coated with Ag by using thermal evaporation method. CoPc layer was prepared with spin coater method. Our study has shown that the new synthesis CoPc make a noteworthy on the OTFT. The CoPc OTFT exhibited saturation at the order of μFET of 2,01 × 10−1 cm2/V s. Ion/Ioff and VT of this device are 2 × 102 and −2,25 V, respectively.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 206, August 2015, Pages 33–41
نویسندگان
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