کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1440846 1509381 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Poly(4-hexyloxythiazole): A new low band gap semiconductor for polymer electronics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Poly(4-hexyloxythiazole): A new low band gap semiconductor for polymer electronics
چکیده انگلیسی


• Poly(4-hexyloxythiazole) was synthesized for the first time.
• The polymer films had crystalline nature similar to poly(3-hexylthiophene).
• Charge mobility in field effect transistor reached 0.02 cm2/V s.
• Bulk heterojunction type solar cells showed a photoresponse up to about 900 nm.

A novel semiconducting polymer poly(4-hexyloxythiazole) with a low optical band gap of 1.4 eV was synthesized and used in organic electronic devices. X-ray diffraction (XRD) measurements reveal a high degree of crystallinity and lamellar packing of poly(4-hexyloxythiazole) in the film similar to poly(3-hexylthiophene). Field effect transistor charge mobility of poly(4-hexyloxythiazole) arrived 0.02 cm2/V s. Bulk heterojunction type solar cells based on poly(4-hexyloxythiazole) shows a photoresponse up to about 900 nm.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 196, October 2014, Pages 139–144
نویسندگان
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