Improving performance of selective-dewetting patterned organic transistors via semiconductor-dielectric blends

• A blend based wetting/dewetting process was demonstrated for patterning OTFTs.
• The TIPS/PMMA blend films have a well-defined bilayer structure.
• The PMMA layer acted as a modification layer and improved the device performance.

The fabrication of the self-patterned OTFTs based on a blend of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and poly(methyl methacrylate) (PMMA) were investigated. Structural analysis revealed a well-defined TIPS-pentacene-top/PMMA-bottom bilayer structure formed in the blend film. Because the PMMA underlayer acts as a modification layer at the semiconductor/dielectric interface, the blend OTFTs exhibited over 5 times higher mobility and significantly reduced hysteresis than pristine TIPS-pentacene device. This selective wetting/dewetting process based on polymer blends allows the formation of patterned films with a self-organized modification layer and has great potential for economical processing of large-area and high-performance electronic devices.

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