کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1441014 1509387 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced photoresponsive mobility of rubrene nanosheet-based organic field effect transistors through hybridization with CdSe/ZnS quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Enhanced photoresponsive mobility of rubrene nanosheet-based organic field effect transistors through hybridization with CdSe/ZnS quantum dots
چکیده انگلیسی


• Fabrication of OFETs using rubrene nanosheet (NS) hybridized with quantum dots (QDs).
• Increase of photocurrent and mobility of OFETs through hybridization with QDs.
• Ground charge transfer and exciton dissociation effects at heterojunctions are important.

Organic field effect transistors (OFETs) were fabricated using a p-type rubrene single nanosheet (NS) as an active layer hybridized with n-type CdSe/ZnS quantum dots (QDs). The dark and photoresponsive (λex = 455 nm) electrical characteristics of the rubrene NS-based OFETs were investigated with and without the QDs. In dark conditions, the source-drain current (IDS) of the OFETs increased and the threshold voltage was shifted to a positive direction after the partial attachment of the QDs to the surface of the NS. We also observed that the laser confocal microscope (LCM) PL intensity of the rubrene NS decreased through the attachment of the QDs, due to the charge transfer effect. With light irradiation, the photoresponsive IDS and mobility of the OFETs were considerably enhanced by the hybridization with QDs. The results originated from both the ground charge transfer and exciton dissociation effects at the interface of p-type rubrene and n-type QDs heterojunctions.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 190, April 2014, Pages 8–12
نویسندگان
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