کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1441081 1509389 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Air stability of C60 based n-type OFETs
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Air stability of C60 based n-type OFETs
چکیده انگلیسی


• Air stability of n-type OFETs.
• Single layer and bilayer encapsulations.
• Relation between RMS value of surface roughness of encapsulation layer and air stability of OFETs.
• Flexible encapsulation layer.

Air stability of C60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with single layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 188, February 2014, Pages 136–139
نویسندگان
, , , , ,