Controlling of photoresponse properties of pentacene thin film phototransistors by dielectric layer thickness and channel widths

• The photoresponse performance of the pentacene thin film transistors was reported.
• Electrical parameters of the transistors were improved depending on fabrication parameters.
• The pentacene transistors can be used in two-terminal photodetector applications.

Organic thin film transistors have recently attracted increasing attention due to some features such as their low production cost, flexibility and possibility of large area. In present review, we report the photoresponse performance of the pentacene thin film transistors including electrodes and dielectric layer thickness. The pentacene transistors having various gate thickness and the various channel widths were fabricated and their electrical characteristics were investigated under dark and white light illuminations. The thickness of gate dielectric layer of the pentacene transistors plays role on the photoresponse of the pentacene transistors. Modification of production parameters of the pentacene organic thin film transistors can be exploited in photosensors based upon organic transistors. It is evaluated that these transistors can be used in two-terminal photodetector applications.

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