کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1441573 | 1509437 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical, mechanical and etch properties of amorphous carbon nitride films grown by plasma enhanced chemical vapor deposition at room temperature
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical, mechanical and etch properties of amorphous carbon nitride films grown by plasma enhanced chemical vapor deposition at room temperature Optical, mechanical and etch properties of amorphous carbon nitride films grown by plasma enhanced chemical vapor deposition at room temperature](/preview/png/1441573.png)
چکیده انگلیسی
Amorphous carbon nitride (a-CN) films were grown on Si(1 0 0) and SiO2/Si(1 0 0) substrates by plasma enhanced chemical vapor deposition at room temperature using gas mixtures of CH4 and N2. The as-deposited films showed two bond structures of CN and CN, and with increasing the N2 content the bond structure changed to graphite-like structure. All the samples showed low optical absorption coefficient (k < 0.15) in the wavelength range of 300–800 nm. The a-CN films exhibited a good resistance to etching (i.e. higher selectivity over SiO2), which indicates a potential use of a-CN films as a new hard mask material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 160, Issues 23–24, December 2010, Pages 2442–2446
Journal: Synthetic Metals - Volume 160, Issues 23–24, December 2010, Pages 2442–2446
نویسندگان
Sang Hoon Kim, Cheol Min Choi, Kil Mok Lee, Yoon-Bong Hahn,