Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction

Hybrid heterojunction cell based on thermally evaporated 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) as the organic semiconductor and p-Si wafer as the inorganic semiconductor have been investigated. This device showed rectification behaviour like diode. The conduction mechanisms and the diode parameters have been studied using current–voltage (I–V) characteristics in the temperature range (298–373 K) and capacitance–voltage (C–V) characteristics at room temperature. This cell exhibited photovoltaic characteristics with a short-circuit current (Isc) of 2.8 mA, an open-circuit voltage (Voc) of 0.475 V, a fill factor FF = 32%.

► A junction of FeTPPCl/p-Si is fabricated using a thermal evaporation technique.
► The junction parameters are investigated by using (I–V) and (C–V) measurements.
► Also, the photovoltaic properties of this junction are investigated.