Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device

In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-type Si/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrent stability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.

► The effect of ZnO doping on a performance of the PEDOT:PSS/Si device was researched.
► ZnO doping led to reductions in resistivity and charge-trap density in PEDOT:PSS.
► The improved photocurrent stability was observed by incorporating ZnO into PEDOT:PSS.
► The enhanced responsivity is interpreted by the device rectifying performance.