کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1441916 | 1509421 | 2012 | 7 صفحه PDF | دانلود رایگان |
A series of hole-transporting molecules based on spiro(fluorene-9,9′-xanthene) were designed and synthesized by a copper-catalyzed modified Ullmann reaction. These compounds have very high-lying HOMO levels (∼5.0 eV), which are beneficial for the hole-injection from ITO anode. The double-layer EL devices using DPA-SFXMe and DPA-SFXBu as hole-transporting layers exhibit lower turn-on voltage and higher efficiency compared with those of a typical NPB-based device. The DPA-SFXBu-based device exhibits high maximum luminescence of 21,712 cd/m2, and its power efficiency can reach a value of 2.31 lm/W, which is nearly 90% higher than that of a similar NPB-based device.
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► We have synthesized a series of hole-transporting materials based on spiro(fluorene-9,9′-xanthene).
► These compounds have very high-lying HOMO levels (∼5.0 eV).
► The EL device based on DPA-SFXBu exhibits the maximum power efficiency of 2.31 lm/W.
Journal: Synthetic Metals - Volume 162, Issues 7–8, May 2012, Pages 614–620