Non-volatile organic memory based on CdSe nano-particle/PMMA blend as a tunneling layer

The use of nano-particle/polymer blend as the tunneling layer for non-volatile organic memory is an alternative to change and improve the device characteristics and performances. A non-volatile organic memory based on the pentacene semiconductor/polymethylmethacrylate (PMMA) + CdSe nano-particle blend tunneling insulator/PMMA gate insulator, is demonstrated by a simple fabrication process. We have observed the charging and discharging effect of CdSe NPs, using capacitance–voltage and current–voltage measurement. The capacitance and current change were observed by a charge transport between the pentacene semiconductor and the CdSe nano-particles. In addition, good reliability was confirmed by the retention characteristics.

► In this work we demonstrated the NPs floating gate memory with CdSe NPs.
► The NPs could be easily fabricated using blended solution of CdSe NPS in PMMA.
► We have observed the memory effect of NPs, using C–V and I–V measurement.
► The devices had a large memory window of 15 V.
► The device showed long charge retention ability of over 10,000 s.