کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1442070 | 1509432 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge transport studies in thermally evaporated 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-MeOTAD) thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Charge transport mechanism in 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenyl amino)-9,9′-spirobifluorene (spiro-MeOTAD) has been investigated as a function of temperature and organic layer thicknesses. Hole only devices of different thicknesses were fabricated in configuration ITO/spiro-MeOTAD/Au by vacuum evaporation technique. The hole current is space charge limited which provides a direct measurement of the hole mobility μ as a function of electric field and temperature. Gaussian disorder model has been used to explain the temperature and field dependent behavior of mobility. The values of energetic disorder (σ = 0.088 eV), positional disorder (Σ = 3.35) and mobility prefactor (μ0 = 0.0147 cm2/V s) have been evaluated using this model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 161, Issues 9–10, May 2011, Pages 828–832
Journal: Synthetic Metals - Volume 161, Issues 9–10, May 2011, Pages 828–832
نویسندگان
Omwati Rana, Ritu Srivastava, Rakhi Grover, M. Zulfequar, M. Husain, M.N. Kamalasanan,