کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1442187 1509431 2011 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Defect-induced shift of the Peierls transition in TTF–TCNQ thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Defect-induced shift of the Peierls transition in TTF–TCNQ thin films
چکیده انگلیسی

In this paper we investigate the influence of the substrate material and film thickness on the Peierls transition temperature in tetrathiafulvalene–tetracyanoquinodimethane (TTF–TCNQ) thin films, grown by physical vapor deposition. Our analysis shows that the substrate material and the growth conditions strongly influence the film morphology. In particular, we demonstrate that the Peierls transition temperature in thin films is lower than in TTF–TCNQ single crystals. We argue that this effect arises due to defects, which emerge in TTF–TCNQ thin films during the growth process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 161, Issues 11–12, June 2011, Pages 976–983
نویسندگان
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