کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1442416 | 1509441 | 2010 | 6 صفحه PDF | دانلود رایگان |
Thin-film organic field-effect transistor was made with vapor-deposited polycrystalline octithiophene on silicon oxide insulator layers. In conventional field-effect transistors, the extracted mobility does not take into account the distribution of charge carriers. However, in disordered organic field-effect transistors, the local charge carrier mobility decreases from the semiconductors/insulator interface in to the bulk, due to its dependence on the charge carrier density. It is demonstrated that the conventional field-effect mobility is a good approximation for the local mobility of the charge carriers at the interface. In this paper we present a new approach to the mobility in organic thin-film transistor (OTFTs), and with a new procedure we extract the electrical parameters of organic TFTs that possible to reproduce very well the device characteristic and mobility.
Journal: Synthetic Metals - Volume 160, Issues 15–16, August 2010, Pages 1787–1792