کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1442458 | 1509451 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline](/preview/png/1442458.png)
چکیده انگلیسی
We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives (N1, N2, and N3) with various numbers of electron-withdrawing CF3 groups. The device using N3, which contains aromatic NTCDI, was found to exhibit an electron mobility (μe) of 0.15 (±0.04) cm2/V s (the maximum μe observed was 0.24 cm2/V s) and an Ion/Ioff (at Vd = 80 V) of approximately 2 × 105. Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 159, Issues 19–20, October 2009, Pages 2117–2121
Journal: Synthetic Metals - Volume 159, Issues 19–20, October 2009, Pages 2117–2121
نویسندگان
Yunoh Jung, Kang-Jun Baeg, Dong-Yu Kim, Takao Someya, Soo Young Park,