کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1442923 | 1509447 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced performance of P3HT/PCBM bulk heterojunction photovoltaic devices by adding spin ½ radicals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have studied bulk heterojunction organic photovoltaic devices (solar cells) based on polymer/fullerene blends using both electrical and magneto-optical methods. We show that adding spin ½ galvinoxyl radicals to the device active layer, consisting of a regio-regular polythiophene/fullerene derivative [P3HT/PCBM] blend, significantly improves the device performance. Compared to pristine photovoltaic devices, the radical-rich devices show improved short-circuit current density, fill factor, and power conversion efficiency. The enhanced device performance is attributed to a reduced geminate recombination rate and improved carrier transport, both of which result from spin-spin interactions between the radical impurities and the photogenerated carriers. Optically detected magnetic resonance, a technique that is sensitive to spin-lattice relaxation rates, is used to verify the proposed mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 160, Issues 3â4, February 2010, Pages 262-265
Journal: Synthetic Metals - Volume 160, Issues 3â4, February 2010, Pages 262-265
نویسندگان
Ye Zhang, Golda Hukic-Markosian, Debra Mascaro, Zeev Valy Vardeny,