کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443091 | 1509453 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of electron- and hole-transporting materials on the performance of FIrpic-doped PVK phosphorescent devices Effect of electron- and hole-transporting materials on the performance of FIrpic-doped PVK phosphorescent devices](/preview/png/1443091.png)
PVK-based phosphorescent FIrpic-doped devices have been fabricated and the effect of carrier transporting materials on the device performance has been investigated. We have fabricated the single-layer and double-layer devices to investigate the role of electron- and hole-transporting materials both when they are mixed in the single- and separated from the emissive layer. We have studied NPB as a hole-transporting material, OXD-7 and PBD as electron-transporting materials. Even though PBD had been well known to be unsuitable as an electron-transporting material for FIrpic-doped PVK devices, it was found in this study that the separate utilization of PBD from PVK:FIrpic layer instead of mixing it with the emissive layer could enhance the device performance significantly. Nevertheless, the OXD-7 was found not only superior to PBD as the electron-transporting material for FIrpic-doped PVK devices but also suitable as an electron-transporting material for the single-layer devices.
Journal: Synthetic Metals - Volume 159, Issues 15–16, August 2009, Pages 1640–1643