کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443114 | 988142 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic–inorganic hybrid gate dielectrics for low-voltage pentacene organic thin film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Organic–inorganic hybrid gate dielectrics for low-voltage pentacene organic thin film transistors Organic–inorganic hybrid gate dielectrics for low-voltage pentacene organic thin film transistors](/preview/png/1443114.png)
چکیده انگلیسی
Organic thin film transistors (OTFTs) for low-voltage operation have been realized with very thin organic–inorganic hybrid gate dielectrics. Organic–inorganic hybrid thin films have good electrical properties, including high dielectric strength and low leakage current density down to 40 nm thickness. In addition, organic–inorganic hybrid thin films have smooth and hydrophobic surface. OTFTs with 40-nm-thick organic–inorganic hybrid dielectrics are operating within −5 V and exhibit a mobility of 0.3 cm2/(V s), a threshold voltage of −2.6 V, and a small subthreshold swing of 0.43 V/decade. In addition, OTFTs with 40-nm-thick organic–inorganic hybrid dielectrics have low hysteresis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 159, Issue 13, July 2009, Pages 1288–1291
Journal: Synthetic Metals - Volume 159, Issue 13, July 2009, Pages 1288–1291
نویسندگان
Chaun Gi Choi, Byeong-Soo Bae,