کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443434 | 1509471 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the film of chitosan by adding the solution of chitosan being a polymeric compound on the top of an n-Si substrate and then by evaporating solvent was formed. It was seen that the chitosan/n-Si contact demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. Average barrier height and ideality factor values for this structure were determined as 0.94Â eV and 1.81, respectively. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitosan/n-Si substrate in the energy range (Ecâ0.785) to (Ecâ0.522)Â eV have been determined from the I-V characteristics. The interface state density Nss ranges from 5.39Â ÃÂ 1012Â cmâ2Â eVâ1 in (Ecâ0.785)Â eV to 1.52Â ÃÂ 1013Â cmâ2Â eVâ1 in (Ecâ0.522)Â eV. The interface state density has an exponential rise with bias from the midgap towards the bottom of the conduction band.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 157, Issues 6â7, April 2007, Pages 297-302
Journal: Synthetic Metals - Volume 157, Issues 6â7, April 2007, Pages 297-302
نویسندگان
Kemal Akkılıç, Ä°lhan Uzun, Tahsin KılıçoÄlu,