کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443700 | 1509480 | 2006 | 4 صفحه PDF | دانلود رایگان |

We report on the influence of channel length on transfer characteristics of pentacene-based thin film transistor (TFT). As the channel length is reduced from 50 to 5 μm, turn-on voltage (Vturn-on) is shifted to more positive values, regardless of surface treatments and gate insulators. Especially in case of relatively short channel TFTs having the channel length of below 10 μm, multi-channel operation behavior has been observed and resulted in hump-shaped transfer characteristics. The positive shift behavior of Vturn-on is similar to the threshold voltage reduction behavior by drain induced barrier lowering in Si devices and multi-channel operation can be explained by the channel length variation inevitably obtained after lift-off patterning of Au/Ti source–drain metal in relatively short channel TFTs.
Journal: Synthetic Metals - Volume 156, Issues 7–8, 5 April 2006, Pages 633–636