کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443943 | 988190 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes](/preview/png/1443943.png)
چکیده انگلیسی
The synthesis, single-crystal structures, and device performance of novel naphthalene-diimide are described. The crystal structure has revealed the importance of a withdrawing group on solid-state packing. Metal molybdenum use as source/drain (S/D) electrodes can improve the performance of the bottom-contact device. The bottom-contact device based on a material of N,N′-bis (4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide has a high mobility of 3.58 × 10−2 cm2 V−1 s−1, a threshold voltage of 1.3 V, and an on/off current ratio of 5.2 × 105.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 158, Issue 7, May 2008, Pages 299–305
Journal: Synthetic Metals - Volume 158, Issue 7, May 2008, Pages 299–305
نویسندگان
Chia-Chun Kao, Pang Lin, Yu-Yuan Shen, Jing-Yi Yan, Jia-Chong Ho, Cheng-Chung Lee, Li-Hsin Chan,