کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1443972 1509478 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of C60 doped interlayer for lifetime improvement of phosphorescent light emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
The effect of C60 doped interlayer for lifetime improvement of phosphorescent light emitting diodes
چکیده انگلیسی

The effect of C60 doped interlayer between poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate) (PEDOT) and light emitting layer on the lifetime of phosphorescent organic light emitting diodes was investigated by changing the C60 content from 0% to 3%. Doping of C60 in 1,3,5-tris(N,N-bis-(4,5-methoxyphenyl)-aminophenyl)benzol (TDAPB) resulted in the increase of lifetime by more than 100% compared with lifetime of non-doped devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 156, Issues 11–13, 1 June 2006, Pages 852–855
نویسندگان
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