کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1473494 | 991046 | 2016 | 11 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Selective active oxidation in hafnium boride-silicon carbide composites above 2000 °C Selective active oxidation in hafnium boride-silicon carbide composites above 2000 °C](/preview/png/1473494.png)
The oxidation behavior of an ultra-high temperature ceramic (UHTC) based on HfB2 with 20vol% SiC and was studied following two 10 min arc-jet test cycles with nominal heat flux of 350 W cm−2, stagnation pressure of 7 kPa, and a sustained peak surface temperature of 2360 °C. Microstructure characterization revealed a modified, layered structure comprising ∼390 μm of porous HfO2 at the surface and an underlying ∼740 μm porous region containing un-oxidized HfB2 over the bulk UHTC, unaffected below the oxidation front. The SiC presumably undergoes active oxidation, as commonly reported for temperatures above ∼1600 ± 100 °C. However, unlike typical of exposures below ∼2000 °C no molten silicate phase was present at the surface to mediate the exchange of oxidant and gaseous reaction products. Additionally, a HfC impurity phase oxidizes concurrently with SiC rather than HfB2. A thermodynamic analysis is provided to explain the observed behavior and the differences with lower temperature scenarios in the literature.
Journal: Journal of the European Ceramic Society - Volume 36, Issue 15, November 2016, Pages 3697–3707