BaTa2V2O11: A novel low fired microwave dielectric ceramic

A Ta-containing microwave dielectric ceramic BaTa2V2O11 with rhombohedral structure was prepared using the conventional solid-state reaction method. Dense BaTa2V2O11 ceramic was obtained at relatively low sintering temperatures (∼870 °C). The ceramic exhibited a high quality factor value (Q × f) of 41,958 GHz, a moderate relative permittivity of 28.2, and a temperature coefficient of the resonant frequency (τf) of 91 ppm/°C. The large positive τf of BaTa2V2O11 could be compensated by forming composite ceramics with Ba2BiV3O11, and 0.4BaTa2V2O11–0.6Ba2BiV3O11 ceramic exhibited improved microwave dielectric properties with ɛr ∼21.1, Q × f ∼44,760 GHz and τf ∼1.9 ppm/°C. The low sintering temperature and favorable microwave dielectric properties make 0.4BaTa2V2O11–0.6Ba2BiV3O11 as a potential candidate material for high-frequency applications.