کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1473714 | 991056 | 2015 | 8 صفحه PDF | دانلود رایگان |
Within the present study, atomic-scale electron microscopy investigation on the crystallization behavior of polysilylcarbodiimide-derived SiCN was performed. The as-prepared SiCN sample was found to be homogeneous and consisted of amorphous silicon nitride nano-domains dispersed within an amorphous, highly entangled graphene-like carbon matrix. Annealing of the sample at 1400 °C induced a slight increase of the ordering of the carbon phase. Additionally, the crystallization onset of the silicon nitride has been observed for the first time. In the sample annealed at 1400 °C small nano-clusters with average sizes of 0.8, 1.5 and 2.1 nm (consisting of 30, 180 and 570 atoms, respectively; corresponding to Si12N18, Si72N108 and Si228N342) were imaged and assigned to α-silicon nitride. The crystallization of the amorphous silicon nitride phase into α-Si3N4 is thought to occur via diffusion of Si and N, which rely on the presence of large number of dangling bonds in the amorphous SiCN sample.
Journal: Journal of the European Ceramic Society - Volume 35, Issue 12, October 2015, Pages 3355–3362