Evolution of precursor in the epitaxial CeO2 films grown by chemical solution deposition

CeO2 films were grown on the Ni-5at.%W substrates by chemical solution deposition using novel cerium propionate as a precursor. In comparison with traditional solution, the new precursor solution exhibited higher stability since no chemical reaction was involved. Pure cerium propionate could promote the decomposition process to form the intermediate amorphous phase at low temperature. The initial crystallization temperature of pure cerium propionate was obviously lower than that of traditional solution, which could be associated with the different decomposition behaviors. Within the new solution, the CeO2 phase started to crystallize at ∼800 °C, which already showed the biaxial texture. The CeO2 film (T = ∼900 °C) exhibited a smooth surface and very good in-plane and out-of-plane textures with the FWHM values of 4.8° and 6.7°. The results suggest that CeO2 film fabricated by the newly developed precursor route may be suitable for the fabrication of other buffer layer and YBa2Cu3Oy layer.